r07ds0503ej0100 rev.1.00 page 1 of 5 jul 07, 2011 preliminary datasheet crd5as-12b reverse conducting thyristor medium power use features ? i t (av) : 5 a ? v drm : 600 v ? i gt : 100 ? a ? the product guaranteed maximum junction temperature 150 ? c ? built-in reverse conducting diode ? planar type outline 2, 4 renesas package code: prss0004zg-a (package name: mp-3a) 1 3 1. cathode 2. anode 3. gate 4. anode 1 3 2 4 applications switching mode power supply, regulator for motorcycle maximum ratings voltage class parameter symbol 12 unit repetitive peak off-state voltage note1 v drm 600 v notes: 1. with gate to cathode resistance r gk =220 ? parameter symbol ratings unit conditions rms on-state current i t(rms) 7.8 a average on-state current i t(av) 5 a commercial frequency, sine half wave 180? conduction, tc=113 ?c surge on-state current i tsm 90 a 60hz sine half wave, 1full cycle, peak value, non-repetitive i 2 t for fusing i 2 t 33 a 2 s value corresponding to 1cycle of half wave 60hz, surge on-state current surge reverse-conducting current i rcsm 3 a sine half wave, pulse width 10ms peak value, non-repetitive, r gk =0 ? peak gate power dissipation p gm 0.5 w average gate power dissipation p g(av) 0.1 w peak gate forward voltage v fgm 6 v peak gate reverse voltage v rgm 6 v peak gate forward current i fgm 0.3 a junction temperature tj ? 40 to +150 ?c storage temperature tstg ? 40 to +150 ?c mass ? 0.26 g typical value r07ds0503ej0100 rev.1.00 jul 07, 2011
crd5as-12b preliminary r07ds0503ej0100 rev.1.00 page 2 of 5 jul 07, 2011 electrical characteristics parameter symbol min. typ. max. unit test conditions repetitive peak off-state current i drm ? ? 2.0 ma tj = 150 ?c, v drm applied r gk =220 ? on-state voltage v tm ? ? 1.8 v tj = 25 ?c, i tm = 15 a instantaneous value gate trigger voltage v gt ? ? 0.8 v tj = 25 ?c, v d = 6 v, i t = 0.1 a gate non-trigger voltage v gd 0.1 ? ? v tj = 150 ?c, v d = 1/2 v drm r gk =220 ? gate trigger current i gt 1 ? 100 ? a tj = 25 ?c, v d = 6 v, i t = 0.1 a holding current i h ? 3 ? ma tj = 25c, v d = 12 v r gk =220 ? thermal resistance r th(j-c) ? ? 3.0 ? c/w junction to case note2 notes: 2. the measurement point fo r case temperature is at anode tab.
crd5as-12b preliminary r07ds0503ej0100 rev.1.00 page 3 of 5 jul 07, 2011 performance curves 10 3 10 2 10 1 10 0 ?40 0 40 80 120 160 typical example maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) 40 20 60 80 100 0 3.8 0.6 1.4 2.2 3.0 1.0 1.8 2.6 3.4 gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature (c) gate characteristics 100 (%) gate trigger current (tj = tc) gate trigger current (tj = 25c) maximum transient thermal impedance characteristics (junction to case, junction to ambient) transient thermal impedance (c/w) time (s) gate trigger voltage vs. junction temperature gate trigger voltage (v) junction temperature (c) junction to ambient junction to case tc = 25c v fgm = 6v v gt = 0.8v i gt = 100a (t j = 25c) p gm = 0.5w v d = 6v r l = 60 p g(av) = 0.1w v gd = 0.1v i fgm = 0.3a 10 2 10 1 10 0 10 0 10 ?2 10 ?1 10 0 10 ?2 10 ?3 10 ?1 10 0 10 0 10 1 10 2 10 3 10 1 10 2 10 2 10 1 10 0 10 2 10 3 10 1 10 0 10 ?1 10 1 10 2 10 ?1 typical distribution typical example 1.0 0.8 0.6 0.4 0.2 0 ?40 0 40 80 120 160 v d = 6v r l = 60
crd5as-12b preliminary r07ds0503ej0100 rev.1.00 page 4 of 5 jul 07, 2011 case temperature (c) maximum average power dissipation (single-phase full wave) average power dissipation (w) average on-state current (a) average on-state current (a) allowable case temperature vs. average on-state current (single-phase full wave) 16 12 6 4 2 14 10 8 0 8 0 76 45 321 8 0 76 45 321 = 30 60 120 90 180 160 120 60 40 20 140 100 80 0 = 30 60 90 120 180 360 resistive loads 360 resistive loads breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage (dv/dt = xv/ s) breakover voltage (dv/dt = 1v/ s) 160 0 80 100 120 140 40 60 20 tj = 125c r gk = 220 typical example 10 0 10 1 10 2 10 3 breakover voltage vs. junction temperature junction temperature (c) 100 (%) breakover voltage (tj = tc) breakover voltage (tj = 25c) 160 120 60 40 20 140 100 80 0 160 ?40 0 40 80 120 typical example r gk = 220
crd5as-12b preliminary r07ds0503ej0100 rev.1.00 page 5 of 5 jul 07, 2011 package dimensions sc-63 0.32g mass[typ.] tmp3 prss0004zg-a renesas code jeita package code previous code unit: mm 10.4max 1max 0.5 0.2 0.1 0.1 0.5 0.2 0.76 0.76 0.2 2.3 0.2 5.3 0.2 6.6 1.4 0.2 6.1 0.2 1 0.2 2.3 2.5min 2.3 1 package name mp-3a ordering information orderable part number packing quantity remark crd5as-12b#b00 tube 75 pcs. ? crd5as-12b-t13#b00 embossed tape 3000 pcs. taping direction ?t1? note : please confirm the specificat ion about the shipping in detail.
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